MOS substrate
英
美 [mɔs ˈsʌbstreɪt]
【计】MOS衬底
双语例句
- Impact of Double-Hump Substrate Current on the Degradation of High Voltage MOS Transistor
双极值衬底电流对高压MOS器件退化的影响 - Measurements of Minority Generation Lifetime of MOS Structures with Nonuniformly Doped Substrate
非均匀掺杂衬底MOS结构少子产生寿命的测量 - Secondly, according to the experimental data, the thesis emphatically and quantitatively studies the influence of substrate doping concentration, substrate bias and channel implant conditions on threshold voltage, and then do the optimization for threshold voltage, after summarizing the structure characteristics of sub-micron MOS devices.
其次，在总结亚微米MOS器件工艺与结构特征的基础上，重点通过实验分析，量化研究了衬底掺杂浓度、衬底偏压和沟道注入条件对阈值电压的影响，并对阈值电压进行了优化设计； - The simulation presupposes that it is possible to develop new MOS thinfilm transistors with crystal silicon substrate and lower threshold voltage.
模拟计算表明，利用薄体效应，可以形成以单晶硅为衬底的，阈电压较低的新型薄膜MOS晶体管。 - The simulation results show that, in the 18V and 30V MOSFET, the breakdown point lies around the junction between the Drain and the Substrate, which is under the gate and close to surface.
模拟结果说明了对于耐压为18~30V的MOS器件，其击穿点位于栅下靠近表面的漏衬结处。 - The effects of above conditions, high k dielectric/ Si system and the selection of SOI as the substrate materials on the total dose radiation effects were reviewed.
综述了上述条件、高k介质/硅系统以及选择SOI材料作为衬底材料对MOS器件总剂量辐射效应的影响。 - Tribological Behavior of MoS 2 Nanoparticle LB Films on Different Metal Substrate
不同金属基体上MoS2纳米微粒LB膜摩擦学行为研究 - A new MOS gate controlled power device& MBSIT is described. Its fabrication process is similar to that of a n-channel power MOSFET and employs an n-epitaxial layer grown on an n+ substrate.
介绍了一种新型MOS控制功率器件&MBSIT，它的制造工艺类似于一个功率MOS的制造工艺，其材料是在n＋衬底上生长n－外延层。 - The decrease of the gate oxide, the differences of field oxides processing and the selection of the substrate materials will all affect the total dose radiation effects of MOS devices.
器件栅氧厚度的减小、场氧工艺的改变以及衬底材料的不同等都将导致MOS器件的总剂量辐射效应发生改变。 - The oxide traps and Si-SiO_2 interracial states introduced in MOS samples with n ( 100) silicon substrate by VUV irradiation ( Helium discharge source) are studied.
以氦灯真空紫外光源研究了辐照下n（100）硅衬底MOS样品的氧化层陷阱和Si-SiO2界面态。 - Correlation between the Damages of MOS Capacitor Induced by Substrate Hot-carrier Ejection and Total Dose Irradiation
MOS电容的热载流子损伤及其与电离辐射损伤的关系 - Influence of MOS Structure Substrate Resistivity on the Photoelectric Parameters
MOS结构衬底电阻率ρ对光电参数的影响 - Response of MOS capacitor to substrate hot-carrier ejection
MOS电容的衬底热电子注入响应特性 - The parasitical resistance generated by the connection wires and the substrate and the parasitical capacitance generated by the contact between probe or base with the device cause that the directly measured results usually can not reflect the real information of the device itself.
MOS电容测量时，连线和样品衬底上的寄生电阻、探针或探针台与样品接触造成的寄生电容等因素，导致直接测量的结果往往不能反映样品本身的真实信息。 - 1N-type substrate diffusion process is the preparation of the common substrate technology, and it is widely used in transistors, MOS tube and other discrete devices in the craft.
N型衬底扩散工艺是目前衬底制备中的常用工艺，被广泛应用于三极管、MOS管等分立器件的加工工艺中。